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ATHENA_1D : 1D Process Simulation
- an1dex01.in : Comparison of Gaussian, Pearson and SVDP methods
- an1dex02.in : Experimental Verification of Channeling Profiles
- an1dex03.in : Dose Dependent Channeling of Phosphorus
- an1dex04.in : Retrograde Well Formation Using High Energy Implants
- an1dex05.in : User-Defined MOMENTs with Parameters from MC Simulation
- an1dex06.in : Comparison of Analytical and MC Implant Models
- an1dex07.in : BCA Models for Well Channeled Boron Implant.
- an1dex08.in : Preamorphization Effect on Shallow Junction Profile.
- an1dex09.in : Al Implant in 4H-SiC in [0001] Crystallographic Direction.
- an1dex10.in : Al Implant in 4H-SiC in [11-23] Crystallographic Direction.
- an1dex11.in : Boron Implant and Anneal
- an1dex12.in : Oxidation Enhanced Diffusion of Boron
- an1dex13.in : Damage Enhanced Diffusion of Arsenic
- an1dex14.in : Transient Enhanced Diffusion using <311> Clusters
- an1dex15.in : Phosphorus Pile-up During Oxidation
- an1dex16.in : Phosphorus Predeposition using POCl
- an1dex17.in : Indium Implant and Anneal
- an1dex18.in : GaAs MESFET Gate Simulation in 1D
- an1dex19.in : Zinc Diffusion in N-type Indium Phosphide
- an1dex20.in : OED Calibration Using THETA.0
- an1dex21.in : Multiple Implant Profile Optimization
- an1dex22.in : Implant Dose Effect at Different Energies using DBInternal
- an1dex23.in : Predeposition Simulation Using PLS Model
- an1dex24.in : Cowern's Experiment Simulation Using PLS Model
- an1dex25.in : Pelaz Experiment Simulation Using PLS Model
- an1dex26.in : 20 keV Implant/Diffusion Simulation Using PLS Model
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