ATHENA_1D : 1D Process Simulation

• an1dex01.in : Comparison of Gaussian, Pearson and SVDP methods
• an1dex02.in : Experimental Verification of Channeling Profiles
• an1dex03.in : Dose Dependent Channeling of Phosphorus
• an1dex04.in : Retrograde Well Formation Using High Energy Implants
• an1dex05.in : User-Defined MOMENTs with Parameters from MC Simulation
• an1dex06.in : Comparison of Analytical and MC Implant Models
• an1dex07.in : BCA Models for Well Channeled Boron Implant.
• an1dex08.in : Preamorphization Effect on Shallow Junction Profile.
• an1dex09.in : Al Implant in 4H-SiC in [0001] Crystallographic Direction.
• an1dex10.in : Al Implant in 4H-SiC in [11-23] Crystallographic Direction.
• an1dex11.in : Boron Implant and Anneal
• an1dex12.in : Oxidation Enhanced Diffusion of Boron
• an1dex13.in : Damage Enhanced Diffusion of Arsenic
• an1dex14.in : Transient Enhanced Diffusion using <311> Clusters
• an1dex15.in : Phosphorus Pile-up During Oxidation
• an1dex16.in : Phosphorus Predeposition using POCl
• an1dex17.in : Indium Implant and Anneal
• an1dex18.in : GaAs MESFET Gate Simulation in 1D
• an1dex19.in : Zinc Diffusion in N-type Indium Phosphide
• an1dex20.in : OED Calibration Using THETA.0
• an1dex21.in : Multiple Implant Profile Optimization
• an1dex22.in : Implant Dose Effect at Different Energies using DBInternal