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CATEGORY INDEX
MOS2 : Advanced MOS Application Examples
mos2ex01.in : Circuit Analysis of NMOS Inverters
mos2ex02.in : Hot Electron Reliability
mos2ex03.in : Gate Turn-on Transient
mos2ex04.in : 3D Width Effect Simulation
mos2ex05.in : Comparison of Id/Vds using EB and NEB models
mos2ex06.in : BSIM3 SPICE Model Extraction (Salicide process)
mos2ex07.in : NMOS Snapback
mos2ex08.in : NMOS Second Breakdown Simulation
mos2ex09.in : Drain/Gate Overlap Capacitance
mos2ex10.in : 2D NMOS simulation from 1D SSUPREM3 Doping
mos2ex11.in : Breakdown Voltage using Ionization Integrals
mos2ex12.in : SiGe PMOS Process and Device Simulation
mos2ex13.in : SiGe PMOS Id/Vds with NEB Model
mos2ex14.in : Comparison of CVT, SHIRAHATA and WATT Mobility Models
mos2ex15.in : Effect of Poly Depletion on C-V curves
mos2ex16.in : Effect of Poly Doping on Threshold Voltage
mos2ex17.in : 20nm n-MOSFET created using 60nm lthography
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