SSUPREM3 : 1-D Process Simulation

• s3ex01.in : NMOS Device: Gate and S/D Active Regions
• s3ex02.in : NMOS Device: Isolation Region
• s3ex03.in : CMOS Device: Generic Process Driven by IC Layout
• s3ex04.in : Bipolar Poly Emitter Device: Active Region
• s3ex05.in : Bipolar Poly Emitter Device: Isolation Region
• s3ex06.in : Spreading Resistance Profile (SRP) Analysis
• s3ex07.in : Implant Profile Variation with Tilt Angle
• s3ex08.in : Monte Carlo Implant into Multilayer Structure
• s3ex09.in : Monte Carlo Implant with Damage
• s3ex10.in : Aluminum Impurity Implant and Diffusion
• s3ex11.in : Gallium Impurity Diffusion
• s3ex12.in : User-Defined Impurity Implant and Diffusion
• s3ex13.in : Making a User-Defined Material
• s3ex14.in : Optimization of Bipolar Structure