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Numerical Analysis of Forward-Current/Voltage
Characteristics of Vertical GaN Schottky-Barrier
Diodes and p-n Diodes on Free-Standing GaN Substrates
Kazuhiro Mochizuki, Senior Member, IEEE, Tomoyoshi Mishima, Senior Member, IEEE, Akihisa Terano,
Naoki Kaneda, Takashi Ishigaki, Member, IEEE, and Tomonobu Tsuchiya
Integrated Simulation Solution for Advanced Power Devices
Dr Ivan Pesic,
8th International Workshop on Compact modeling, January 25, 2011 Yokohama Japan
Simulation and verification of void transfer patterning (VTP) technique for nm-scale features
Guriqbal Singh Josan, Archana Devasiaa, Sean Rommela and Santosh K. Kurineca,
Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623, USA
ISEN Advanced Diffusion and Oxidation Models Slated for Inclusion in ATHENA
Dr. Bruno Baccus, ISEN and Peter Hopper, Silvaco
2-D Simulation of Ion Irradiated Silicon Power Devices
P. Hazdra, J. Vobecky, F. Spurny, J. Voves , Department of Microelectronics,
Czech Technical University in Prague, Technicka 2, Praha 6, CZ-166 27, Czech Republic
A User’s Perspective on Simulator Calibration
By Michael Duane, Advanced Micro Devices (AMD), FAB 25
Single-Event Gate-Rupture in Power MOSFETs:
Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence
© 1995 IEEE. Reprinted, with permission, from IEEE Transactions on Nuclear Science, Vol.42, December 1995.
M. Allenspach1, I. Mouret1,2, J.L. Titus3, C.F. Wheatley, Jr.4 ,
R.L. Pease5, J.R. Brews1, R.D. Schrimpf1, and K.F. Galloway1
1 The University of Arizona, Tuscon, AZ 85721
2 Aerospatiale, Les Mureaux, France
3 Naval Surface Warfare Center - Crane, IN 47522
4 RR2 Box 1120,, Drums, PA 18222
5 RLP Research, Inc., Albuquerque, NM 87122
The Simulation of Wide Band Gap Semiconductor Materials for Use in High Temperature and Other Applications
Craig Wilson (Silvaco International) and Anthony O'Neill (University of Newcastle upon Tyne, England)
Device Simulation of a Trench-IGBT with Integrated Diverter Structures
This article is based on the original paper "Trench-IGBTs with Integrated Diverter Structures" published by Rainer Constapel, Jacek Korec, and B. J. Baliga
in Proceedings of ISPSD 95, Yokohama.
CNET Physical Diffusion Model Included in ATHENA
Daniel Mathiot, France Telecom, CNET Grenoble
Temperature Dependence of Latch-up Holding Point for Majority Carrier Guards up to 250°C
D. Uffmann, J. Ackermann, J. Stemmer, J. Aderhold, and H.-U. Schröder
Laboratorium für Informationstechnologie, Universität Hannover
Schneiderberg 32, D-30167 Hannover, Germany
Analysis of the Effect of Etchpit Defects on Breakdown Voltage
Ralph (Sam) Smith III, Raytheon Electronic Systems
Process Oriented MESFET Models for Transistor Design using ATLAS and ATHENA/FLASH
Andrew J Panks, Christopher M Snowden and Michael J Howes
Microwave and Terahertz Technology Group
Department of Electronic and Electrical Engineering
The University of Leeds, Leeds, LS2 9JT, UK.
Electrically Controlled Silicon-based Photonic Crystal Chromatic Dispersion Compensator with Ultra Low Power Consumption
Ching Eng Pnga,*, Gi Ho Parka, Soon Thor Lima, Er Ping Lia, Aaron J. Dannerb, Kensuke Ogawac, Yong Tsong Tanc,
a Advanced Photonics and Plasmonics, IHPC, A*Star, 1 Science Park Rd, #01-01, Singapore 117528.
b Department of ECE, National University of Singapore, 4 Engineering. Drive 3, Singapore 117576
c Optics and Electronics Lab., Fujikura Ltd, 1440 Mutsuzaki, Sakura, Chiba, 285-8550, Japan
Blaze Simulation of SiGe:Si Heterostructure p-MOSFETs
P. A. Clifton, and A. G. O'Neill*
*Department of Electrical and Electronic Engineering, University of Newcastle, UK. Simulation of Silicon Germanium HBTs Using ATLAS/BLAZE
C. K. Maiti and G. A. Armstrong
Department of Electrical & Electronic Engineering, Ashby Building, The Queen's University of Belfast
Simulation of Ion Irradiated Power Devices in ATLAS
J. Vobecky and P. Hazdra
Czech Technical University in Prague, Department of Microelectronics, Czech Republic
A Model for Boron T.E.D. in Silicon: Full Couplings of Dopant with Free and Clustered Interstitials
F. Boucard1,2,3, D. Mathiot1, E. Guichard2, and P. Rivallin3
1 Laboratoire PHASE-CNRS, 23 rue du Loess, F-67037 Strasbourg Cedex 2, France
2 SILVACO DATA SYSTEMS, 55, rue Blaise Pascal, F-38330 Montbonnot, France
3 LETI-CEA, 17 Av. des Martyrs F-38054 Grenoble cedex 9, France Non-Stationary Transport Effects: Impact on Performances of Realistic 50nm MOSFET Technology
D. Munteanu, G. Le Carval, G. Guegan
LETI, CEA / Grenoble, Microelectronics Department
17 rue des Martyrs, 38054 Grenoble, France
Calibrated and Predictive Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation
P. Scheiblin
LETI (CEA-Grenoble) - 17, rue des Martyrs - 38054 Grenoble Cedex 09 – FRANCE
Validation of CLEVER Interconnect Parasitics with 0.18 µm Process Measurements
Benoit Froment and Herve Jaouen - SGS-Thomson Microelectronics
Low-Power Systems-on-a-Chip CAD
E. McShane, Y. Xu, P. Khandelwal, and K. Shenai
Department of Electrical Engineering & Computer Science, 1135 SED
University of Illinois at Chicago,, Chicago, IL 60607
MixedMode Simulation of Power Electronic Converters
M. Trivedi, A. Mulay, R. Vijayalakshmi, and K. Shenai
Department of Electrical Engineering & Computer Science, 1135 SED
University of Illinois at Chicago,, Chicago, IL 60607
3D Numerical Simulation of the Pseudo-MOS Transistor for SOI Film Characterization
D. Munteanu[1], S. Cristoloveanu[1] and E. Guichard[2]
1LPCS/ENSERG, 23 rue des Martyrs BP 257, F-38016 Grenoble Cedex 1, France
[2]Silvaco Data System Sarl, 8, av. de Vignate 38610 Gières France
An Organic Light-Emitting Diode with Field-Effect Electron
Transport
By Sarah Schols,* Stijn Verlaak, Cédric Rolin, David Cheyns, Jan Genoe, and Paul Heremans
Light-emitting organic field-effect transistor using an organic heterostructure within the transistor channel,
Stijn De Vusser, Sarah Schols, Soeren Steudel, Stijn Verlaak, Jan Genoe, Wibren D. Oosterbaan, Laurence Lutsen, Dirk Vanderzande, and Paul Heremans
Modeling of GaInP/GaAs DualJunction Solar Cells Including Tunnel Junction
Mathieu Baudrit and Carlos Algora, Instituto de Energía Solar, Universidad Politécnica de Madrid, Spain
3D Simulation of Ion Milling for Mass Storage Applications
Z. Djuric, A. Hoessinger, A. Babayan, A. Nejim, Silvaco Data Systems Europe Ltd,
Silvaco Technology Centre, Compass Point, St. Ives, Cambridgeshire PE27 5JL UK,
B. Lafferty & A. Moore, Seagate Technology (Ireland), 1 Disc Drive, Springtown Ind Estate,
Derry, N. Ireland BT48 0BF, UK
M.A. Seigler, Seagate Research, 1251 Waterfront Place, Pittsburgh, PA 15222, USA,
Simulation and Experimental Results on the Forward J–V Characteristic of Al Implanted 4H–SiC p–i–n Diodes,
Francesco G. Della Cortea, Fortunato Pezzimentia, , Roberta Nipotib
aDIMET—Faculty of Engineering, Mediterranea University of Reggio Calabria, Via Graziella
3D Simulation of Nanowire FETs using Quantum Models,
Vijay Sai Patnaik, Ankit Gheedia and M. Jagadesh Kumar
Design Improvement of RF 3D MIM Damascene Capacitor,
S. Capraro, C. Bermond, T.T. Vo, J. Piquet, B. Fléchet LAHC, IMEP-LAHC, Université de Savoie, Campus Scientifi que, 73736 Le Bourget du Lac, France, stephane.capraro@univ-savoie.fr
M. Thomas, A. Farcy, J. Torres, S. Cremer STMicroelectronics, 850 rue J. Monnet, 38926 Crolles cedex, France
E. Guichard, A. Haen Silvaco Data Sytems, 55 rue Pascal Blaise, 38330 Montbonnot St Martin, France
(Improvement_of_RF_3D_MIM_Damascene_capacitor.pdf)
Double-Gate Tunnel FET With High- k Gate Dielectric
Kathy Boucart and Adrian Mihai Ionescu, Member, IEEE
Two-dimensional ATLAS Device Simulation of an Organic Ambipolar Lightemitting Field-Effect Transistor,
Sarah Schols, Paul Heremans
A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation,
VASILY SUVOROV, ANDREAS HOSSINGER, ZORAN DJURIC and NEBOYSHA LJEPOJEVIC
Silvaco Technology Center, Compass Point, St Ives, Cambridgeshire, PE27 5JL, UK.
Two-Dimensional ATLAS Device Simulation of an Organic Light-Emitting Field-Effect Transistor Using a Heterostructure Inside the Transistor Channel,
Sarah Schols, Stijn De Vusser and Paul Heremans
IMEC, Kapeldreef 75,B3001 Leuven,Belgium
Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices,
José María Tirado, José Luis Sánchez-Rojas, and José Ignacio Izpura
Electrical Stress Degradation of Small-Grain Polysilicon Thin-Film Transistors,
Domenico Palumbo, Silvia Masala, Paolo Tassini, Alfredo Rubino, and Dario della Sala
TCAD Modeling and Data of NOR Nanocrystal Memories,
S. Jacob (1, 2), L. Perniola(1), P. Scheiblin(1), B. De Salvo(1), G. Lecarval(1), E. Jalaguier(1),
G. Festes(2), R. Coppard(2), F. Boulanger(1), S. Deleonibus(1)
(1) CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France, stephanie.jacob@cea.fr
(2) ATMEL Rousset, Zone industrielle, 13790 Rousset, France
A Semi-Analytical Model for the Subthreshold Behavior of FinFLASH Structures,
L. Perniola, J. Razafi ndramora, P. Scheiblin, F. Daug´e, C. Jahan, B. De Salvo, G. Reimbold, F. Boulanger
CEA-LETI
17, Rue des Martyrs, F - 38054, Grenoble, France, luca.perniola@cea.fr
G. Ghibaudo
INP Grenoble MINATEC
3, Parvis Louis N´eel, BP 257, 38016 Grenoble Cedex 1
Numerical Analysis of GaInP Solar Cells: Toward Advanced Photovoltaic Devices Modeling,
M. Baudrit, C. Algora, I. Rey-Stolle, I. García and B. Galiana
Instituto de Energía Solar / Universidad Politécnica de Madrid
E.T.S.I Telecomunicación - Av. Complutense 38
E-28040 Madrid SPAIN
Simulation and Characterization of High-Frequency Performances of Advanced MIM Capacitors,
J.Piquet(1), O.Cueto(2), F.Charlet(3), M.Thomas(4), C.Bermond(1), A.Farcy(4), J. Torres(4), B.Fléchet(1)
(1) LAHC, Université de Savoie, Bâtiment Le Chablais, 73376 Le Bourget du lac cedex, France.
(2) CEA/DRT-LETI/D2NT-CEA/GRE, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.
(3) SILVACO. 55 rue Blaise Pascal 38330 Montbonnot St Martin France.
(4) STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex, France
Process Flow Simulation and Manufacture of Variable RF MEMS Capacitors,
Yong Qing Fu, Jack Luo, Stuart Milne, Andrew Flewitt
Engineering Department, University of Cambridge, Cambridge UK
Ahmed Nejim
Silvaco, St Ives, Cambridgeshire PE27 5JL, UK
Pending Issues in the Modeling of Concentrator Solar Cells,
C. Algora, M. Baudrit, I. Rey-Stolle, D. Martín, R. Peña, B. Galiana and J. R. GonzálezInstituto de Energía Solar – E.T.S.I. Telecomunicación – Universidad Politécnica de MadridAvda. Complutense 38; 28040
Transient Simulations of Edge Emitting Fabry-Perot InP/InGaAsP Laser Diode Using Silvaco TCAD Tools,
M. Nadeem Akram, Richard Schatz
Royal Institute of Technology, Laboratory of Photonics and MicrowaveEngineering
ELECTRUM 229, SE-164 40 Kista-Stockholm, SWEDEN
A.Nejim Silvaco Data Systems Europe Ltd, Compass Point, St. Ives, Cambridgeshire, PE27 5JL, UK
Electrostatic Effect of Localized Charge in Dual Bit Memory Cells with DiscreteTraps,
L. Perniola(1, 2,*), S. Bernardini(3), G. Iannaccone(1,6), B. De Salvo (4), G. Ghibaudo (2), P. Masson(3), C. Gerardi(5)
(1)Dipartimento di Ingegneria dell’Informazione, Università degli Studi di Pisa, Via Caruso, 56122 Pisa, Italy, *perniola@enserg.fr
(2)IMEP-CNRS/INPG, Avenue de Martyrs 32, 38016 Grenoble, France
(3) L2MP-Polytech – IMT Technopôle de Château Gombert, 13451 Marseille Cedex 20 France
(4)CEA-LETI, Avenue de Martyrs 16, 38054 Grenoble, France
(5)STMicroelectronics, Catania, Italy
(6)IEIIT-CNR, Via Caruso, 56122 Pisa, Italy.
Schrödinger Approach and Density Gradient Model for Quantum Effects Modeling,
A.Ferron1, B.Cottle2, G.Curatola3, G.Fiori3, E.Guichard1
1 Silvaco Data Systems, 55 rue Blaise Pascal, 38330 Montbonnot Saint-Martin, France
2 Silvaco International, 4701 Patrick Henry Dr., Santa Clara, CA 95054, USA
3 University of Pisa, Via Diotisalvi 2, I-56122, Pisa, Italy
Low Voltage Super Junction MOSFET Simulation and Experimentation,
Timothy Henson, Joe CaoInternational Rectifier, 233 Kansas St, El Segundo, CA 90245 USA, Phone +01 310 726 8842, Fax +01 310 726 8847 E-mail: thenson1@irf.com
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